DocumentCode :
190
Title :
A Highly Time Sensitive XOR Gate for Probe Attempt Detectors
Author :
Manich, Salvador ; Strasser, Marc
Author_Institution :
Dept. of Electron. Eng., Univ. Politec. de Catalunya-BarcelonaTech, Barcelona, Spain
Volume :
60
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
786
Lastpage :
790
Abstract :
Probe attempt detectors are sensors designed to protect buses of secure chips against the physical contact of probes. The operation principle of these detectors relies on the comparison of the delay propagation times between lines. CMOS XOR gates are very well suited for this comparison since they are small, fast, and compatible with the technology used in secure chips. However, the lack of activity while comparing matched lines and the limited reaction time pose a risk for tampering and decrease the sensitivity of the sensor, respectively. In this brief, a modification of a CMOS XOR gate is presented, which solves both the aforementioned problems.
Keywords :
CMOS integrated circuits; probes; system-on-chip; CMOS XOR gates; delay propagation; highly time sensitive XOR gate; operation principle; probe attempt detectors; secure chips; CMOS integrated circuits; Delays; Detectors; Logic gates; Probes; Standards; Transistors; CMOS integrated circuits; logic gates; phase detection; smart cards;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2013.2278126
Filename :
6589211
Link To Document :
بازگشت