Gigabit CMOS transimpedance amplifiers for optical communication applications

Author

Park, Sung Min

Author_Institution

Sch. of Electr. Eng., Ulsan Univ., South Korea

Volume

2

fYear

2003

fDate

6-6 July 2003

Firstpage

211

Abstract

A number of gigabit transimpedance amplifiers are realized in submicron CMOS technologies. By exploiting regulated cascode (RGC) configuration for the input stage, the amplifiers efficiently isolate the large input parasitic capacitance and hence achieve significant bandwidth improvement. A 1.25-Gb/s RGC TIA demonstrates 950 MHz bandwidth for O.5 pF photodiode capacitance and the only 93 MHz difference even for 1 pF photodiode capacitance. Also, a 2.5-Gb/s RGC TIA realized in a 0.6 /spl mu/m CMOS technology demonstrates 2.2 GHz bandwidth for O.5 pF photodiode capacitance, confirming the RGC mechanism. In addition, a differential RGC TIA is realized in a 0.25 /spl mu/m CMOS technology. Optical measurements clearly show 1.25-Gb/s operation for 1 pF photodiode capacitance with 80 dB/spl Omega/ transimpedance gain.

Keywords

CMOS integrated circuits; differential amplifiers; optical communication; photodiodes; semiconductor optical amplifiers; 0.25 micron; 0.5 pF; 0.6 micron; 1 pF; 2.2 GHz; 93 MHz; 950 MHz; RGC; TIA; input parasitic capacitance; optical communication; optical measurement; photodiode capacitance differential RGC TIA; regulated cascode configuration; submicron CMOS technologies; transimpedance amplifier; transimpedance gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2003. Proceedings KORUS 2003. The 7th Korea-Russia International Symposium on

Conference_Location

Ulsan, South Korea

Print_ISBN

89-7868-617-6

Type

conf

Filename

1222607