Bimodal electromigration mechanisms in dual-damascene Cu line/via on W

Author

Hu, C.-K. ; Gignac, L. ; Liniger, E. ; Rosenberg, R. ; Stamper, A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2002

fDate

2002

Firstpage

133

Lastpage

135

Abstract

Electromigration in 0.23 μm wide Cu dual-damascene lines connected to W underlayers has been investigated. Void growth at the vicinity of the cathode end of the line/via was determined to be the cause of the line failure. The distribution of failure lifetimes was found to be closely represented by a two-log-normal function. Focused ion beam analysis showed that the two failure populations had distinct difference in the location of the void growth.

Keywords

copper; electromigration; failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit reliability; tungsten; voids (solid); 0.23 micron; Cu dual-damascene lines; Cu-SiN; Cu-W; FIB analysis; W underlayers; bimodal electromigration mechanisms; cathode end; failure lifetime distribution; failure populations; focused ion beam analysis; line failure; two-log-normal function; via failure; void growth; Contact resistance; Current density; Distribution functions; Electromigration; Frequency estimation; Gaussian processes; Resists; Solids; Temperature; Uncertainty;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014911

Filename

1014911