Thermal stress of 140 nm-width Cu damascene interconnects

Author

OKADA, Norio ; Matsubara, Yoshihisa ; KIMURA, Hidekazu ; AIZAWA, Hirokazu ; Nakamura, Norio

Author_Institution

ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan

fYear

2002

fDate

2002

Firstpage

136

Lastpage

138

Abstract

We found two failure modes induced by thermal process at 150°C and 350°C in 140 nm Cu interconnects. One is two-dimensional (2D) agglomeration in which 140 nm-width line metal is pulled into the wider root metal. The other is three-dimensional (3D) agglomeration in which 130 nm via metal is pulled toward the upper wide metal. 140 nm Cu structural analysis using EXAFS also shows two types of structure change, presumably corresponding to each failure modes.

Keywords

CMOS integrated circuits; EXAFS; VLSI; copper; failure analysis; integrated circuit interconnections; integrated circuit reliability; large scale integration; thermal stresses; 130 nm; 140 nm; 150 degC; 2D agglomeration; 350 degC; 3D agglomeration; CMOS device; Cu; Cu damascene interconnects; EXAFS; LSI technology; electrical failure analysis; extended X-ray absorption fine structure technique; failure modes; structural analysis; structure change; thermal stress; Annealing; Dielectric materials; Laboratories; Medical services; Metallization; National electric code; Strontium; Testing; Thermal stresses; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014912

Filename

1014912