DocumentCode
1900237
Title
Electromigration failure mechanism studies on copper interconnects
Author
Fischer, A.H. ; von Glasow, A. ; Penka, S. ; Ungar, F.
Author_Institution
Dept. of Reliability Methodology, Infineon Technol. AG, Munich, Germany
fYear
2002
fDate
2002
Firstpage
139
Lastpage
141
Abstract
Electromigration (EM) studies revealed a strong correlation between the observed failure scenario and local microstructural properties at the via-to-line-transition, in particular that of the liner. "Early" failure modes were found to have not only smaller failure times but also a lower current density exponent. The influence of specific processes on the occurrence of certain failure modes is discussed.
Keywords
copper; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; voids (solid); Cu; Cu interconnects; current density exponent; early failure modes; electromigration failure mechanism; failure times; liner; local microstructural properties; via-to-line-transition; Conductivity; Copper; Current density; Electromigration; Electrons; Failure analysis; Process control; Silicon compounds; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN
0-7803-7216-6
Type
conf
DOI
10.1109/IITC.2002.1014913
Filename
1014913
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