Title :
A super-dynamic flip-flop circuit for broadband applications up to 24 Gbit/s utilizing production-level 0.2-/spl mu/m GaAs MESFETs
Author :
Otsuji, T. ; Yoneyama, M. ; Murata, K. ; Sano, E.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
This paper describes a novel dynamic flip-flop (FF) circuit that can operate 30% faster than conventional clocked inverter-type FFs. A new wide-band clock buffer is introduced to cover the FF operation range. An 8- to 24-Gbit/s decision circuit and a 9- to 26-GHz 1/2 frequency divider were developed using production-level 0.2-/spl mu/m GaAs MESFET technology.
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect logic circuits; flip-flops; gallium arsenide; 0.2 micron; 24 Gbit/s; GaAs; GaAs MESFET; broadband clock buffer; decision circuit; frequency divider; super-dynamic flip-flop circuit; Clocks; FETs; Feedback circuits; Flip-flops; Frequency conversion; Gallium arsenide; Laboratories; MESFETs; Negative feedback; Wideband;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567831
