DocumentCode :
1900291
Title :
Liquid-phase chemical sensors using InP-based open-gate FETs
Author :
Yoshizawa, Naoki ; Sato, Taketomo ; Mizohata, Akinori
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
fYear :
2008
fDate :
26-29 Oct. 2008
Firstpage :
1305
Lastpage :
1308
Abstract :
In this paper, we demonstrated that the InP-based open-gate FET worked well as a liquid-phase chemical sensor in acid electrolytes. The open-gate FET clearly exhibited current saturation and pinch-off behavior in the electrolyte, resulted in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes, and their sensitivity was strongly dependent on ion species contained in the electrolyte.
Keywords :
III-V semiconductors; chemical sensors; electrolytes; indium compounds; ion sensitive field effect transistors; InP; acid electrolytes; liquid-phase chemical sensors; open-gate FET; Biosensors; Chemical sensors; Electrodes; Epitaxial layers; FETs; Gas detectors; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
ISSN :
1930-0395
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2008.4716684
Filename :
4716684
Link To Document :
بازگشت