DocumentCode
1900291
Title
Liquid-phase chemical sensors using InP-based open-gate FETs
Author
Yoshizawa, Naoki ; Sato, Taketomo ; Mizohata, Akinori
Author_Institution
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
fYear
2008
fDate
26-29 Oct. 2008
Firstpage
1305
Lastpage
1308
Abstract
In this paper, we demonstrated that the InP-based open-gate FET worked well as a liquid-phase chemical sensor in acid electrolytes. The open-gate FET clearly exhibited current saturation and pinch-off behavior in the electrolyte, resulted in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes, and their sensitivity was strongly dependent on ion species contained in the electrolyte.
Keywords
III-V semiconductors; chemical sensors; electrolytes; indium compounds; ion sensitive field effect transistors; InP; acid electrolytes; liquid-phase chemical sensors; open-gate FET; Biosensors; Chemical sensors; Electrodes; Epitaxial layers; FETs; Gas detectors; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2008 IEEE
Conference_Location
Lecce
ISSN
1930-0395
Print_ISBN
978-1-4244-2580-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2008.4716684
Filename
4716684
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