• DocumentCode
    1900291
  • Title

    Liquid-phase chemical sensors using InP-based open-gate FETs

  • Author

    Yoshizawa, Naoki ; Sato, Taketomo ; Mizohata, Akinori

  • Author_Institution
    Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
  • fYear
    2008
  • fDate
    26-29 Oct. 2008
  • Firstpage
    1305
  • Lastpage
    1308
  • Abstract
    In this paper, we demonstrated that the InP-based open-gate FET worked well as a liquid-phase chemical sensor in acid electrolytes. The open-gate FET clearly exhibited current saturation and pinch-off behavior in the electrolyte, resulted in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes, and their sensitivity was strongly dependent on ion species contained in the electrolyte.
  • Keywords
    III-V semiconductors; chemical sensors; electrolytes; indium compounds; ion sensitive field effect transistors; InP; acid electrolytes; liquid-phase chemical sensors; open-gate FET; Biosensors; Chemical sensors; Electrodes; Epitaxial layers; FETs; Gas detectors; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2008 IEEE
  • Conference_Location
    Lecce
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-2580-8
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2008.4716684
  • Filename
    4716684