In situ DRIFT study of the CO response mechanism of MISFET sensors using a Pt/SiO2 model sensor

Author

Becker, Elin ; Skoglundh, Magnus ; Andersson, Mike ; Spetz, And Anita Lloyd

Author_Institution

Competence Centre for Catalysis, Chalmers Univ. of Technol., Goteborg

fYear

2008

fDate

26-29 Oct. 2008

Firstpage

1309

Lastpage

1312

Abstract

The temperature dependence of the sensor response towards CO of SiC-FET sensors has been studied by combining in situ DRIFT spectroscopy and sensor response measurements. The DRIFT spectroscopy studies have been performed on a model sensor representing the top layer of a SiC-FET sensor with porous Pt gate. Adsorbates on the model sensor have been studied at varying temperatures and gas concentrations, and correlated to sensor response measurements at similar experimental conditions. The results show that the temperature dependence partly can be correlated to the CO coverage of the surface. The switching point of the sensor response, observed at different temperatures depending on the CO and oxygen concentrations is well in accordance with the kinetics of the CO oxidation reaction.

Keywords

MISFET; chemical sensors; platinum; silicon compounds; DRIFT spectroscopy; MISFET sensors; Pt-SiO₂; temperature dependence; Biosensors; Chemical and biological sensors; Gas detectors; Hydrogen; Insulation; MISFETs; Sensor phenomena and characterization; Spectroscopy; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2008 IEEE

Conference_Location

Lecce

ISSN

1930-0395

Print_ISBN

978-1-4244-2580-8

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2008.4716685

Filename

4716685