In situ DRIFT study of the CO response mechanism of MISFET sensors using a Pt/SiO2 model sensor

The temperature dependence of the sensor response towards CO of SiC-FET sensors has been studied by combining in situ DRIFT spectroscopy and sensor response measurements. The DRIFT spectroscopy studies have been performed on a model sensor representing the top layer of a SiC-FET sensor with porous Pt gate. Adsorbates on the model sensor have been studied at varying temperatures and gas concentrations, and correlated to sensor response measurements at similar experimental conditions. The results show that the temperature dependence partly can be correlated to the CO coverage of the surface. The switching point of the sensor response, observed at different temperatures depending on the CO and oxygen concentrations is well in accordance with the kinetics of the CO oxidation reaction.