Impact of dielectrics and metals properties on electrical performances of advanced on-chip interconnects

Author

Bermond, Cédric ; Fléchet, Bemard ; Farcy, Alexis ; Arnal, V. ; Torres, Joaquin ; Carval, Gilles Le ; Angénieux, Gilbert ; Salik, Rachid

Author_Institution

LAHC, Univ. de Savoie, Le Bourget Du Lac, France

fYear

2002

fDate

2002

Firstpage

161

Lastpage

163

Abstract

In high-speed advanced IC, performances of on-chip interconnects decrease due to crosstalk. Improvements thanks to copper metallization and new generations of low and ultra-low-k dielectrics are quantified in this paper. Based on a rigorous electromagnetic approach, electrical models of coupled lines are extracted and simulation procedures are experimentally verified. Both resulted in electrical critical parameters comparison for several interconnect generations.

Keywords

circuit simulation; copper; crosstalk; dielectric thin films; electromagnetic field theory; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; permittivity; Cu; copper metallization; coupled lines; crosstalk; dielectric properties; electrical critical parameters; electrical models; electrical performance; electromagnetic approach; high-speed IC; interconnect generations; interconnect performances; low-k dielectrics; metal properties; on-chip interconnects; simulation procedures; ultra-low-k dielectrics; Air gaps; Crosstalk; Degradation; Delay effects; Dielectrics; Electrical resistance measurement; Frequency; Integrated circuit interconnections; Metallization; Microstrip;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014920

Filename

1014920