DocumentCode :
1900398
Title :
An Analytical Forward Transit Time/current Gain Model for SiGe-Base Hbts
Author :
Lu, T.C. ; Chen, H.P. ; Kuo, J.B.
Author_Institution :
Dept. of Electrical Eng., National Taiwan University, Taiwan
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
77
Lastpage :
78
Keywords :
Analytical models; Bipolar transistors; Current density; Doping profiles; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor process modeling; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664565
Filename :
664565
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1900398
بازگشت