• DocumentCode
    1900398
  • Title

    An Analytical Forward Transit Time/current Gain Model for SiGe-Base Hbts

  • Author

    Lu, T.C. ; Chen, H.P. ; Kuo, J.B.

  • Author_Institution
    Dept. of Electrical Eng., National Taiwan University, Taiwan
  • fYear
    1993
  • fDate
    6-7 March 1993
  • Firstpage
    77
  • Lastpage
    78
  • Keywords
    Analytical models; Bipolar transistors; Current density; Doping profiles; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor process modeling; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
  • Conference_Location
    Taipei, Taiwan
  • Print_ISBN
    0-7803-1225-2
  • Type

    conf

  • DOI
    10.1109/SMS.1993.664565
  • Filename
    664565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1900398