DocumentCode :
1900438
Title :
Low noise multiwavelength avalanche photodiode
Author :
Chia, C.K.
Author_Institution :
Inst. of Mater. Res. & Eng., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2010
fDate :
5-9 Dec. 2010
Firstpage :
1
Lastpage :
4
Abstract :
A Monte Carlo simulation suggests extremely low noise can be obtained in the Ge/AlxGa1-xAs avalanche photodiodes (APDs). These APDs are versatile for multiple-wavelength detection at 850, 1310 and 1550 nm for applications in data- and tele-communications.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; germanium; Ge-AlxGa1-xAs; Monte Carlo simulation; data communication; low noise multiwavelength avalanche photodiode; multiple wavelength detection; telecommunication; wavelength 1310 nm; wavelength 1550 nm; wavelength 850 nm; APD; GaAs; Ge; heterogeneous integration; heterojunction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fibre Technology (ACOFT), 2010 35th Australian Conference on
Conference_Location :
Melbourne, VIC
Type :
conf
DOI :
10.1109/ACOFT.2010.5929895
Filename :
5929895
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1900438
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