Interference suppression of wireless interconnection in Si integrated antenna

Author

Rashid, A. B M Harun-ur ; Watanabe, S. ; Kikkawa, T. ; Guo, X. ; O, Kenneth K.

Author_Institution

Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan

fYear

2002

fDate

2002

Firstpage

173

Lastpage

175

Abstract

A detailed technological study of a Si integrated antenna is performed by using 3-D finite element simulation. The effects of transmission gain on antenna length, distance and rotation angle are simulated. Simulation of interference effect reveals that the antenna transmission gain decreases rapidly with increasing the number of signal carrying metal lines between the transmitter and the receiver or with decreasing the distance between the metal lines and the transmitter/receiver. It is found that sufficient transmission gain can be obtained in the presence of interference structures by using high resistivity Si or high permittivity interlayer dielectric material below the antenna.

Keywords

VLSI; digital integrated circuits; dipole antennas; elemental semiconductors; finite element analysis; integrated circuit interconnections; interference suppression; microwave antennas; silicon; 3D finite element simulation; Si; Si integrated antenna; VLSI system; antenna length; dipole transceiver; high permittivity interlayer dielectric material; high resistivity Si substrate; interference effect; interference suppression; rotation angle; transmission gain; wireless clock distribution; wireless interconnection; Clocks; Computational modeling; Conductivity; Dielectric materials; Dipole antennas; Frequency; Interference suppression; Receiving antennas; Transmitters; Transmitting antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014924

Filename

1014924