Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs

Author

del Alamo, J.A. ; Somerville, M.H.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

7

Lastpage

10

Abstract

In spite of their superior transport characteristics, InP HEMTs deliver lower output power than GaAs PHEMTs in the millimeter-wave regime. However, the superior power-added efficiency of InP HEMTs when compared with PHEMTs, makes this technology attractive for many applications. The reason for the lower power output of InP HEMTs is their relatively small off- and on-state breakdown voltage (BV). The authors review the state of knowledge regarding the physics of BV in InP HEMTs placing it in contrast with PHEMTs. They also discuss strategies for improving BV and the power output of InP HEMTs.

Keywords

III-V semiconductors; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device breakdown; EHF; InP; MM-wave power HEMTs; breakdown voltage; millimeter-wave regime; output power; power InP HEMTs; power-added efficiency; Electric breakdown; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Millimeter wave technology; PHEMTs; Physics; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722608

Filename

722608