Damage in silicon caused by magnetron ion etching and its recovery effect

Author

Hirai, Minoru ; Iwakuro, Hiroaki ; Ohno, Jun-Ichi ; Kuroda, Tsukasa

Author_Institution

Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan

fYear

1990

fDate

20-23 May 1990

Firstpage

681

Abstract

Damage in silicon exposed to an MIE (magnetron ion etching) plasma has been investigated. The damage was characterized by Schottky barrier height measurements using Al/n-Si diodes. The depths of the damaged layer are determined as a function of RF power. It is found that the damaged layer at an RF power of 2 kW (self-bias: 270 V) is about 12 nm, and that the damage depths correlate with the self-bias voltage, that is, the energy of ions impinging on the Si surface during plasma exposure. Several methods for removal of the damaged layer were examined. It was found that the damaged layer can be removed by a wet Si etching

Keywords

Schottky effect; Schottky-barrier diodes; aluminium; elemental semiconductors; silicon; sputter etching; 2 kW; Al-Si diodes; MIE; RF power; Schottky barrier height measurements; Si; damage depths; magnetron ion etching; plasma exposure; recovery effect; self-bias voltage; wet etching; Magnetic confinement; Magnetic flux; Plasma applications; Plasma chemistry; Plasma measurements; Semiconductor films; Silicon; Surface contamination; Surface discharges; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1990. ., 40th

Conference_Location

Las Vegas, NV

Type

conf

DOI

10.1109/ECTC.1990.122263

Filename

122263