Title :
A 1mG-to-20G integrated MEMS inertial sensor
Author :
Yamane, Daisuke ; Konishi, Toshifumi ; Matsushima, Takaaki ; Toshiyoshi, Hiroshi ; Masu, Kazuya ; Machida, Katsuyuki
Author_Institution :
Precision & Intell. Lab., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We report an integrated MEMS (micro-electro-mechanical systems) inertial sensor with the sensing range from 1mG to 20G (G = 9.8 m/s2), which is suitable to realize integrated CMOS (complementary-metal-oxide semiconductor)-MEMS accelerometers. By utilizing the high-density of gold and the electroplating process, we have implemented five sets of single-axis MEMS capacitive inertial sensors on a silicon die of 4 mm × 4 mm to obtain a wide sensing range from 1mG to 20G. The measured Brownian noise is ranged from 82.4 nG/Hz1/2 to 1.11 μG/Hz1/2, which shows the feasibility of high-resolution sensing.
Keywords :
CMOS integrated circuits; accelerometers; capacitive sensors; electroplating; inertial systems; microsensors; Au; Brownian noise; complementary-metal-oxide semiconductor; electroplating process; integrated CMOS-MEMS accelerometers; integrated MEMS inertial sensor; microelectromechanical systems; silicon die; single-axis MEMS capacitive inertial sensors; Acceleration; Accelerometers; Frequency measurement; Gold; Micromechanical devices; Semiconductor device measurement; Sensors; CMOS-MEMS accelerometer; MEMS; gold; inertial sensor; sub-mG;
Conference_Titel :
SENSORS, 2014 IEEE
Conference_Location :
Valencia
DOI :
10.1109/ICSENS.2014.6985322
