Title :
Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC´s
Author :
Tokumitsu, T. ; Hirano, M. ; Yamasaki, K. ; Yamaguchi, C. ; Aikawa, M.
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
Abstract :
A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.
Keywords :
III-V semiconductors; MMIC; cellular arrays; elemental semiconductors; gallium arsenide; integrated circuit technology; silicon; 17 to 24 GHz; 3D MMIC technology; 7 to 10 GHz; GaAs; Si; TAT; manufacturing cost; masterslice design; reactive-impedance-matching amplifier; single-chip receiver; Costs; Electrodes; Fabrication; Gallium arsenide; Laboratories; MIM capacitors; MMICs; Manufacturing; Passive circuits; Polyimides;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567833
