Title :
New complementary PVD-Ta/CVD-WN stacked barrier structure for copper metallization
Author :
Tai, Kaori ; Ohtorii, Hiizu ; Takahashi, Shingo ; Komai, Naoki ; Horikoshi, Hiroshi ; Sato, Shuzo ; Ohoka, Yutaka ; Segawa, Yuji ; Ishihara, Masao ; Yasuda, Zenya ; Nogami, Takeshi
Author_Institution :
Adv. Process R&D Labs., Sony Corp., Kanagawa, Japan
Abstract :
A PVD-Ta/CVD-WN stacked barrier structure has been newly developed. Its PVD-Ta layer and CVD-WN layer work complementarily. Its conformal CVD-WN layer provides an excellent barrier performance and helps the overlying Cu seed suitable for Cu filling. Its PVD-Ta surface layer which contacts Cu directly provides an agglomeration-resistive interface and suppresses migration-up of Cu in features in thermal processes. Its PVD-Ta layer also solves the galvanic corrosion which had been an issue in CMP of the directly contacting Cu/WN system. Sharp distribution in line resistance has been successfully obtained for Cu interconnects with the newly developed complementary PVD-Ta/CVD-WN barrier.
Keywords :
chemical vapour deposition; copper; corrosion; diffusion barriers; electric resistance; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; sputter deposition; tantalum; tungsten compounds; Cu filling; Cu interconnect line resistance; PVD-Ta surface layer; WN-Ta-Cu; agglomeration-resistive interface; chemical vapour deposition; complementary PVD-Ta/CVD-WN stacked barrier structure; conformal CVD-WN layer; copper metallization; diffusion barrier; feature copper migration suppression; galvanic corrosion; overlying Cu seed; physical vapour deposition; thermal fabrication processes; Annealing; Atherosclerosis; Copper; Corrosion; Filling; Galvanizing; Laboratories; Metallization; Research and development; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014931
