Adhesion studies of thin films on ultra low k

Author

Maitrejean, S. ; Fusalba, F. ; Patz, M. ; Jousseaume, V. ; Mourier, T.

Author_Institution

CEA-DRT-LETI/DTS-CEA/GRE, Grenoble, France

fYear

2002

fDate

2002

Firstpage

206

Lastpage

208

Abstract

Adhesion of interfaces related to LKD 5109, a spin-on ultra low k (ULK) material, is quantified using the four-point-bending method. Processing and surface treatment are optimized. Results are compared to CMP process impact. Relatively low adhesion levels are measured for liner/ULK, ULK/cap layer and ULK/cap layer/metal layer interfaces as expected for an ULK material. Nevertheless, CMP can be performed with success on blanket wafers and on an ULK/Cu damascene structure.

Keywords

adhesion; bending; chemical mechanical polishing; dielectric thin films; integrated circuit interconnections; integrated circuit reliability; interface structure; permittivity; surface chemistry; CMP; CMP process impact; Cu; LKD 5109 spin-on ultra low k material; ULK/Cu damascene structure; ULK/cap layer interfaces; ULK/cap layer/metal layer interfaces; adhesion levels; blanket wafer; four-point bending method; interface adhesion; liner/ULK interface; process optimization; surface treatment; Adhesives; Atherosclerosis; Copper; Dielectric materials; Laboratories; Plasma materials processing; Surface treatment; Testing; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014935

Filename

1014935