Title :
Interconnect mechanical reliability with low κ dielectric as final ILD
Author :
Goldberg, Cindy ; Mercado, Lei ; Filipiak, Stanley ; Crown, Stephen
Author_Institution :
Adv. Products R&D Lab., Motorola Inc., Austin, TX, USA
Abstract :
The use of low κ materials as the final intralayer dielectric (ILD) layer can impact the integrity of edge seals, blown fuses, and even the interface integrity at lower levels. Furthermore, the influence of the final ILD on lower levels depends on the total number of metal levels in the product. This paper addresses the role of final ILD in both environmental and package reliability, and the use of predictive modeling of mechanical reliability.
Keywords :
dielectric thin films; environmental testing; interconnections; semiconductor device models; semiconductor device packaging; semiconductor device reliability; ILD; blown fuses; edge seals; environmental reliability; interconnect mechanical reliability; interface integrity; intralayer dielectric; low κ dielectric; metal levels; predictive modeling; Adhesives; Delamination; Dielectric materials; Fuses; Materials reliability; Mechanical factors; Moisture; Packaging; Predictive models; Thermal stresses;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014936
