Title :
EM lifetime improvement of Cu damascene interconnects by p-SiC cap layer
Author :
Hatano, Masaaki ; Usui, Takamasa ; Shimooka, Yoshiaki ; Kaneko, Hisashi
Abstract :
Mean time to failure (MTF) of Cu damascene interconnects with p-SiC cap layer is achieved to be approximately 2 times as long as that with conventional p-SiN cap layer. This improvement can be explained by the difference of adhesion between Cu and the cap layer. It is also found that Cu dominant diffusion path is the interface between Cu and the cap layer for Cu interconnects with TaN/Ta and p-SiC, p-SiN.
Keywords :
adhesion; copper; diffusion; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; EM lifetime; SiC-Cu; adhesion; damascene interconnects; dominant diffusion path; mean time to failure; Annealing; Atherosclerosis; Fabrication; Failure analysis; Manufacturing processes; Optical microscopy; Semiconductor device manufacture; Sputtering; Testing; Transmission electron microscopy;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014937
