Title :
Formation of mechanically strong low-k film using supercritical fluid dry technology
Author :
Ogawa, Shinichi ; Nasuno, Takashi ; Egami, Miki ; Nakashima, Akira
Author_Institution :
Adv. Technol. Res. Dept., Semicond. Leading Edge Technol. Inc., Yokohama, Japan
Abstract :
Supercritical fluid (SCF) dry technology has been applied in formation of a porous low-k film for the first time. The SFC treatment was used to extract templates chemically from the low-k film, which form nm-scale pores, without any gelation of the framework followed by curing anneal. Results showed that the SCF treatment brought smaller pore size with higher mechanical properties at lower cure temperature of 350 °C.
Keywords :
Young´s modulus; dielectric thin films; integrated circuit interconnections; mechanical strength; porous materials; 350 degC; cure temperature; mechanical properties; mechanically strong low-k film; nm-scale pores; pore size; porous low-k film; supercritical fluid dry technology; Chemical technology; Curing; Dielectric constant; Dielectric materials; Lead compounds; Mechanical factors; Semiconductor films; Silicon compounds; Solvents; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014939
