• DocumentCode
    1901000
  • Title

    Transport considerations in porous low k and metal interconnect systems approaching atomic dimensions

  • Author

    Thomas, Michael E. ; Smith, Douglas M. ; Wallace, Stephen ; Iwamoto, Nancy

  • Author_Institution
    Honeywell Electron. Mater., Star Center, Sunnyvale, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    223
  • Lastpage
    225
  • Abstract
    Integrated circuit technology´s furious push for greater density and higher cost/performance has generally ignored the effect of feature size on material transport. This paper addresses transport issues in porous low k dielectric and metal systems as feature sizes approach atomic dimensions. One result of this analysis indicates that transport differences between open vs. closed pore low k dielectrics, in many process situations, is not at issue based on bulk material transport properties. This analysis has ramifications extending well into other interconnect materials areas.
  • Keywords
    dielectric thin films; integrated circuit interconnections; porous materials; atomic dimensions; bulk material transport properties; closed pore; cost/performance; density; feature size; integrated circuit technology; metal interconnect systems; open pore; porous low k dielectric; process situations; transport considerations; Amorphous materials; Atomic measurements; Conducting materials; Dielectric materials; Gases; Integrated circuit interconnections; Nanoporous materials; Semiconductor materials; Silicon compounds; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
  • Print_ISBN
    0-7803-7216-6
  • Type

    conf

  • DOI
    10.1109/IITC.2002.1014940
  • Filename
    1014940