DocumentCode :
1901000
Title :
Transport considerations in porous low k and metal interconnect systems approaching atomic dimensions
Author :
Thomas, Michael E. ; Smith, Douglas M. ; Wallace, Stephen ; Iwamoto, Nancy
Author_Institution :
Honeywell Electron. Mater., Star Center, Sunnyvale, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
223
Lastpage :
225
Abstract :
Integrated circuit technology´s furious push for greater density and higher cost/performance has generally ignored the effect of feature size on material transport. This paper addresses transport issues in porous low k dielectric and metal systems as feature sizes approach atomic dimensions. One result of this analysis indicates that transport differences between open vs. closed pore low k dielectrics, in many process situations, is not at issue based on bulk material transport properties. This analysis has ramifications extending well into other interconnect materials areas.
Keywords :
dielectric thin films; integrated circuit interconnections; porous materials; atomic dimensions; bulk material transport properties; closed pore; cost/performance; density; feature size; integrated circuit technology; metal interconnect systems; open pore; porous low k dielectric; process situations; transport considerations; Amorphous materials; Atomic measurements; Conducting materials; Dielectric materials; Gases; Integrated circuit interconnections; Nanoporous materials; Semiconductor materials; Silicon compounds; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
Type :
conf
DOI :
10.1109/IITC.2002.1014940
Filename :
1014940
Link To Document :
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