DocumentCode
1901094
Title
Backside illuminated thinned CMOS image sensors for space imaging
Author
Minoglou, K. ; De Munck, K. ; Tezcan, D.S. ; Van Hoof, Chris ; De Moor, P. ; Bogaerts, Jasper ; Veltroni, I.F.
Author_Institution
IMEC, Leuven
fYear
2008
fDate
26-29 Oct. 2008
Firstpage
1429
Lastpage
1432
Abstract
This paper presents two aspects of ongoing research at Imec, to develop high-end CMOS APS sensors, optimized for space-born imaging. Both hybrid and monolithic thinned backside illuminated CMOS imagers with a unique combination of techniques and performance enhancing concepts have been developed. Here we report on their radiation tolerance and UV sensitivity, two critical characteristics for space science imaging instruments. Radiation testing, using both proton and gamma irradiation, of CMOS imagers proved that dark current performance did not significantly deteriorate. Also, initial test images taken under 185-400 nm illumination, showed the imagers to be UV sensitive.
Keywords
CMOS image sensors; CMOS APS sensors; backside illuminated thinned CMOS image sensors; radiation testing; space-born imaging; CMOS image sensors; Dark current; Instruments; Optical imaging; Radiation detectors; Sensor arrays; Sensor phenomena and characterization; Silicon; Space technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2008 IEEE
Conference_Location
Lecce
ISSN
1930-0395
Print_ISBN
978-1-4244-2580-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2008.4716712
Filename
4716712
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