Title :
Voiding in ultra porous low-k materials proposed mechanism, detection and possible solutions
Author :
Jacobs, Thieu ; Brennan, Ken ; Carpio, Ron ; Mosig, Karsten ; Lin, Jing-Cheng ; Cox, Henri ; Mlynko, Walt ; Fourcher, Jo ; Bennett, Joe ; Wolf, Josh ; Augur, Rod ; Gillespie, Paul
Author_Institution :
Int. Sematech, Austin, TX, USA
Abstract :
The need for new low-k materials for interconnect dielectrics to meet the requirements stated in the International Technology Roadmap for Semiconductors offers many new challenges to the etch and clean processes. One significant challenge is the absorbance of process chemicals in open porous low-k films and incomplete removal of these contaminants. Porous low-k voiding is an integration issue recently addressed at International Sematech. This work proposes a mechanism of porous low-k voiding and an analytical technique to detect contamination in porous low-k films at sub 1% levels. Additionally, possible solutions to prevent low-k voiding are presented.
Keywords :
chemical analysis; dielectric thin films; etching; impurities; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; porous materials; surface cleaning; voids (solid); cleaning processes; contaminant analytical techniques; contamination detection; etch processes; incomplete contaminant removal; low-k interconnect dielectrics; open porous low-k films; porous low-k material voiding; porous low-k voiding; porous material voids; process chemical absorbance; voiding mechanisms; voiding prevention solutions; Annealing; Ash; Chemicals; Copper; Dielectric materials; Etching; Plasma chemistry; Resists; Semiconductor materials; Silicon compounds;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014944
