Title :
Stopper-less hybrid low-k/Cu DD structure fabrication combined with low-k CMP
Author :
Usami, T. ; Nanbu, H. ; Sugai, K. ; Tagami, M. ; Miyamoto, H.
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
Abstract :
We demonstrated a stopper-less hybrid of low-k/Cu dual damascene using organic (k=2.65) and inorganic low-k (k=2.6) films for a 0.13-μm node to obtain lower effective k and good planarization. An inorganic low-k CMP and dual hard mask process were used. This process had good etching selectivity, a low RC value, and good via yield, and in the case with inorganic low-k CMP, no metal residue remained in the multi-layered structure. Using these technologies, a 5-layered hybrid structure was established.
Keywords :
chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; organic compounds; permittivity; surface contamination; surface topography; 0.13 micron; Cu; RC value; effective k value; etching selectivity; five-layered hybrid structure; inorganic low-k films; low-k CMP; metal residue; multi-layered structure; organic low-k films; planarization; stopper-less hybrid low-k/Cu dual damascene structure; technology node; via yield; Chemical vapor deposition; Copper; Dielectric constant; Etching; Fabrication; Lithography; National electric code; Planarization; Resists; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014948
