Title :
CAD Model for Threshold and Subthreshold Conduction in Short Channel MOSFETs
Author :
Antognetti, P. ; Caviglia, D. ; Profumo, E.
Author_Institution :
University of Genova - Italy
Abstract :
In this work we propose a simple model for the operation of the short channel MOSFET in weak and strong inversion. This model shows a better agreement to experimental data than previous models and is well suited for use in circuit simulation programs.
Keywords :
Analytical models; Circuit simulation; Doping; Electrons; MOSFETs; Numerical analysis; SPICE; Statistics; Subthreshold current; Threshold voltage;
Conference_Titel :
Solid State Circuits Conference, 1981. ESSCIRC '81. 7th European
Conference_Location :
Freiburg, F. R. Germany
