DocumentCode :
1901358
Title :
HTS shielded dielectric resonators
Author :
Penn, S.J. ; Alford, N.McN.
Author_Institution :
EEIE, South Bank Univ., London, UK
fYear :
1996
fDate :
35174
Firstpage :
42522
Lastpage :
42526
Abstract :
Single crystal dielectrics and HTS thin films have been shown to possess very high quality factors (Q). This makes them highly desirable in the area of cellular and satellite communications. A disadvantage is that single Crystal dielectrics are expensive. Dielectrics resonators produced by sintering are well known but generally do not possess high enough Q factors to offer significant performance advantage. We show that by careful attention to the quality of the ceramic processing and to the sintering conditions, very high Q dielectric resonators can be produced. Room temperature Q of 5×104 is routinely measured at 10 GHz. We present preliminary results on sintered dielectrics and HTS thick film shields which demonstrate that Q´s well in excess of 105 are achievable at 10 GHz and 77 K. This opens up the possibility of constructing inexpensive filters with exceptionally low insertion loss
Keywords :
Q-factor; dielectric resonators; high-temperature superconductors; shielding; sintering; superconducting microwave devices; superconducting thin films; thick film devices; 10 GHz; 77 K; HTS shielded dielectric resonators; HTS thick film shields; SHF; ceramic processing; low insertion loss; quality factors; sintering conditions;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Superconducting Microwave Circuits, IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19960598
Filename :
543502
Link To Document :
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