Title :
Proceedings of the 34th European Solid-State Device Research Conference
Abstract :
The following topics are dealt with: multiple gate FETs; gate stack technology; characterization techniques; power and high voltage devices; CMOS processing; decananometer device simulation; high-k devices; RF and analog devices; physical mechanism and characterization; device architectures; device reliability; nonvolatile memory devices; SOI devices; emerging display technologies; material related issues; photodetectors; noise modelling ; device and circuit modeling; shallow junctions and stress; organic electronics; nanodevices; memory technology.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; display instrumentation; integrated circuit modelling; integrated memory circuits; molecular electronics; nanoelectronics; permittivity; photodetectors; random-access storage; semiconductor device metallisation; semiconductor device models; semiconductor device noise; semiconductor junctions; silicon-on-insulator; stress analysis; CMOS processing; RF devices; SOI devices; Si-SiO/sub 2/; analog devices; characterization techniques; circuit modeling; decananometer device simulation; device architectures; device characterization; device modeling; display technologies; gate stack technology; high voltage devices; high-k devices; material related issues; memory technology; multiple gate FET; nanodevices; noise modelling; nonvolatile memory devices; organic electronics; photodetectors; physical mechanism; power devices; shallow junction stress;
Conference_Titel :
Solid-State Device Research Conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356461
