Title :
A new ALD-TiN/CoSi2 contact plug process for reliable and low defect density bit-line integration in sub-quarter micron giga-bit DRAM
Author :
Park, Seong Geon ; Kang, Sang-Bom ; Choi, Gil Heyum ; Chung, U. In ; Moon, Joo Tae
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
This paper reports a new ALD-TiN/CoSi2 contact plug process for giga-bit scale DRAM bit-line contacts. Using this technology, we obtained a low contact resistance of 315Ω/cnt for BL/N+ and 1518Ω/cnt for BL/P+ in 0.16 μm contacts, as well as a crack-free integration scheme and low level of defect density.
Keywords :
DRAM chips; chemical vapour deposition; cobalt compounds; contact resistance; integrated circuit interconnections; integrated circuit reliability; ohmic contacts; titanium compounds; 0.14 to 0.34 micron; ALD-TiN/CoSi2 contact plug process; SEM cross-section; SIMS profile; TEM micrographs; TiN-CoSi2; atomic layer deposition; crack-free integration scheme; giga-bit scale DRAM bit-line contacts; low contact resistance; ohmic layers; reliable low defect density bit-line integration; Contact resistance; Displays; Etching; Heat treatment; Hydrogen; Impurities; Materials testing; Plugs; Thermal resistance; Tin;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014957
