DocumentCode :
1901596
Title :
Two-Dimensional Numerical Simulation for GaAs MESFET with Heavy Doping Effects
Author :
Kow-Ming Chang ; Gwo-Liang Lin
Author_Institution :
Department of Electronics Engineering and lnstitue of Electronics, National Chiao Tung University, Taiwan, Republic of China
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
89
Lastpage :
90
Keywords :
Circuit simulation; Design engineering; Gallium arsenide; MESFETs; Numerical simulation; Photonic band gap; Poisson equations; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664570
Filename :
664570
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1901596
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