DocumentCode
1901596
Title
Two-Dimensional Numerical Simulation for GaAs MESFET with Heavy Doping Effects
Author
Kow-Ming Chang ; Gwo-Liang Lin
Author_Institution
Department of Electronics Engineering and lnstitue of Electronics, National Chiao Tung University, Taiwan, Republic of China
fYear
1993
fDate
6-7 March 1993
Firstpage
89
Lastpage
90
Keywords
Circuit simulation; Design engineering; Gallium arsenide; MESFETs; Numerical simulation; Photonic band gap; Poisson equations; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location
Taipei, Taiwan
Print_ISBN
0-7803-1225-2
Type
conf
DOI
10.1109/SMS.1993.664570
Filename
664570
Link To Document