High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 °C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 °C, the fabricated inverter operates properly at a supply voltage (V_DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V_TH), 2.4 V for logic-low noise margin (NM_L), and 3.4 V for logic-high noise margin (NM_H). Meanwhile, the inverter exhibits small variations from RT to 300 °C in terms of logic voltage swing, V_TH, NM_L, and NM_H with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.