DocumentCode :
1901637
Title :
Silicon VLSI trends - what else besides scaling CMOS to its limit?
Author :
Ning, Tak H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
1
Lastpage :
4
Abstract :
Silicon CMOS is fast reaching its scaling limits. Nonetheless, silicon CMOS will remain the backbone technology for all digital designs. While attempts to extend the limits of CMOS will continue, there will also be increasing focus on other silicon technologies that can contribute significantly to system performance. Large amounts of high-performance on-chip memory are needed to minimize the performance penalty caused by the finite size of the cache memory. Large amounts of low-power NVRAM are needed for data storage in systems where magnetic disk storage is not available. High-performance and low-power mixed-signal technology is needed for wireless systems. Also, a truly non-volatile RAM could be a game changer to system designers.
Keywords :
BiCMOS memory circuits; CMOS digital integrated circuits; DRAM chips; VLSI; cache storage; elemental semiconductors; high-speed integrated circuits; mixed analogue-digital integrated circuits; silicon; system-on-chip; NVRAM; Si; cache memory; data storage; digital designs; high-performance mixed signal technology; low power mixed-signal technology; nonvolatile RAM; on-chip memory; silicon CMOS; silicon VLSI; wireless systems; CMOS technology; Cache memory; MOSFET circuits; Nonvolatile memory; Random access memory; Silicon; System performance; Tunneling; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
Type :
conf
DOI :
10.1109/IPFA.2003.1222710
Filename :
1222710
Link To Document :
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