DocumentCode
1901709
Title
Power dissipation issues in interconnect performance optimization for sub-180 nm designs
Author
Banerjee, K. ; Mehrotra, A.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
2002
fDate
13-15 June 2002
Firstpage
12
Lastpage
15
Abstract
This paper addresses the problem of power dissipation during the buffer insertion phase of interconnect performance optimization. It is shown that the interconnect delay is actually very shallow with respect to both the repeater size and separation close to the minimum point. A methodology is developed to calculate the repeater size and inter-buffer interconnect length which minimizes the total interconnect power dissipation for any given delay penalty. This methodology is used to calculate the power-optimal buffering schemes for various ITRS technology nodes for 5% delay penalty. Furthermore, this technique is also used to quantify the relative importance of the various components of the power dissipation for power-optimal solutions for various technology nodes.
Keywords
VLSI; circuit optimisation; delays; integrated circuit interconnections; integrated circuit layout; low-power electronics; 180 nm; ITRS technology nodes; buffer insertion phase; delay penalty; inter-buffer interconnect length; interconnect delay; interconnect performance optimization; power dissipation; power-optimal buffering schemes; repeater size; Capacitance; Delay estimation; Integrated circuit interconnections; Integrated circuit technology; Optimization; Power dissipation; Power system interconnection; Repeaters; Routing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits Digest of Technical Papers, 2002. Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-7310-3
Type
conf
DOI
10.1109/VLSIC.2002.1015029
Filename
1015029
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