DocumentCode :
1901715
Title :
Amplification of Hypersound in GaN Films
Author :
Diaz-Ayala, F. ; Grimalsky, V. ; Tecpoyotl-Torres, M. ; Escobedo-Alatorre, J. ; Koshevaya, S.
Author_Institution :
Autonomous Univ. of Morelos, Cuernavaca
fYear :
2007
fDate :
25-28 Sept. 2007
Firstpage :
180
Lastpage :
183
Abstract :
The excitation of hypersonic waves (f =50 - 200 GHz) due to its coupling with amplified space charge waves in GaN films is theoretically researched. An amplification of space charge waves due to negative differential conductivity in GaN films on semi-infinite substrate is considered and spatial increments are obtained. The amplified space charge waves can excite hypersonic waves at the same frequency due to piezoeffect and deformation potential mechanisms. It is also demonstrated that the piezoeffect is very effective for resonant excitation of hypersonic waves in the case of full mechanic contact of GaN film and nonpiezoelectic substrate.
Keywords :
III-V semiconductors; gallium compounds; semiconductor thin films; space charge waves; ultrasonic waves; wide band gap semiconductors; GaN; amplified space charge waves coupling; deformation potential mechanisms; frequency 50 GHz to 200 GHz; gallium nitride films; hypersonic wave resonant excitation; hypersound amplification; mechanic contact; negative differential conductivity; piezoeffect mechanisms; semiinfinite substrate; Conducting materials; Conductivity; Electron mobility; Frequency; Gallium arsenide; Gallium nitride; Poisson equations; Resonance; Space charge; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Robotics and Automotive Mechanics Conference, 2007. CERMA 2007
Conference_Location :
Morelos
Print_ISBN :
978-0-7695-2974-5
Type :
conf
DOI :
10.1109/CERMA.2007.4367682
Filename :
4367682
Link To Document :
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