Title :
Near speed-of-light on-chip electrical interconnect
Author :
Chang, R.T. ; Yue, C.P. ; Wong, S.S.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
The propagation limits of electrical signals for systems built with conventional silicon processing are explored. Data transmission near the speed of light with an all-electrical system can be achieved by taking advantage of the inductance-dominated high-frequency regime of on-chip interconnect. In a 0.18 /spl mu/m, 6-level Aluminum CMOS technology, an overall delay of 278 ps for a 20 mm long line corresponding to a propagation velocity of one half the speed of light in silicon dioxide has been demonstrated.
Keywords :
CMOS integrated circuits; aluminium; integrated circuit interconnections; 0.18 micron; Al; Si-SiO/sub 2/; all-electrical system; data transmission; electrical signal propagation; high-frequency inductance; multilevel aluminum CMOS technology; propagation delay; propagation velocity; silicon dioxide; silicon processing; speed-of-light on-chip electrical interconnect; Aluminum; CMOS technology; Frequency; Integrated circuit interconnections; Optical propagation; Power system interconnection; Propagation delay; Repeaters; Silicon; Wire;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2002. Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7310-3
DOI :
10.1109/VLSIC.2002.1015032
