DocumentCode :
1901813
Title :
Failures in copper interconnects-localization, analysis and degradation mechanisms
Author :
Zschech, E. ; Langer, E. ; Meyer, M.A.
Author_Institution :
ADM Saxony LLC & Co. KG, Dresden, Germany
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
37
Lastpage :
44
Abstract :
In this paper, we focussed about the failures in copper interconnects and on analytical techniques that are applied for physical failure analysis. Electromigration test structure after partial degradation by voiding was observed using SEM images.
Keywords :
copper; electromigration; failure analysis; integrated circuit interconnections; scanning electron microscopy; voids (solid); SEM; copper interconnects; degradation; electromigration; failures; voids; Copper; Degradation; Etching; Failure analysis; Integrated circuit interconnections; Metrology; Optical surface waves; Surface acoustic waves; Surface emitting lasers; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
Type :
conf
DOI :
10.1109/IPFA.2003.1222735
Filename :
1222735
Link To Document :
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