Perspective of FinFETs for analog applications

Author

Kilchytska, V. ; Collaert, N. ; Rooyackers, R. ; Lederer, D. ; Raskin, J.P. ; Flandre, D.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

65

Lastpage

68

Abstract

FinFETs are known to be one of the most promising technological solutions to create high-performance ultra-scaled Si MOSFETs. In this paper, we present the first detailed experimental investigation of the analog performance of FinFETs with channel lengths down to 50 nm. We demonstrate that such devices have very strong potential for analog applications, mainly thanks to a super-high value of the Early voltage and hence intrinsic gain, which they can provide. The impact of fin width on device characteristics is also analysed. We show that the narrowest devices appear as the most promising, since they operate in the fully-depleted regime, even possibly in volume inversion.

Keywords

MOSFET; analogue circuits; 50 nm; Early voltage; Si; analog FinFET channel length; fin width effects; fully-depleted regime operation; intrinsic gain; short channel effects; transconductance; ultra-scaled MOSFET; volume inversion conditions; Degradation; FinFETs; Laboratories; MOSFETs; Microelectronics; Microwave technology; Paper technology; Performance gain; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356489

Filename

1356489