Title :
130 nm process technology integration of advanced Cu/CVD low k dielectric material-case study of failure analysis and yield enhancement
Author :
Tsang, C.F. ; Su, Y.J. ; Bliznetsov, V.N. ; Ang, G.T.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
We reported the failure analysis of 130 nm Cu/CVD low k film back-end-of-line (BEOL) process and successfully identified the root causes of failures leading to electrical yield loss of the process. We also demonstrated the significant yield enhancements through a) optimization of via & trench etch recipes and post-etch clean condition, b) tightened defectivity control and c) in-line monitoring control.
Keywords :
CVD coatings; copper; failure analysis; integrated circuit interconnections; leakage currents; nanotechnology; 130 nm; Cu; Cu-CVD low k dielectric material; defectivity control; electrical yield loss; failure analysis; line monitoring control; nanotechnology; Computer aided software engineering; Condition monitoring; Copper; Dielectric materials; Electrical resistance measurement; Etching; Failure analysis; Kelvin; Leakage current; Scanning electron microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
DOI :
10.1109/IPFA.2003.1222740
