130 nm process technology integration of advanced Cu/CVD low k dielectric material-case study of failure analysis and yield enhancement

Author

Tsang, C.F. ; Su, Y.J. ; Bliznetsov, V.N. ; Ang, G.T.

Author_Institution

Inst. of Microelectron., Singapore, Singapore

fYear

2003

fDate

7-11 July 2003

Firstpage

63

Lastpage

68

Abstract

We reported the failure analysis of 130 nm Cu/CVD low k film back-end-of-line (BEOL) process and successfully identified the root causes of failures leading to electrical yield loss of the process. We also demonstrated the significant yield enhancements through a) optimization of via & trench etch recipes and post-etch clean condition, b) tightened defectivity control and c) in-line monitoring control.

Keywords

CVD coatings; copper; failure analysis; integrated circuit interconnections; leakage currents; nanotechnology; 130 nm; Cu; Cu-CVD low k dielectric material; defectivity control; electrical yield loss; failure analysis; line monitoring control; nanotechnology; Computer aided software engineering; Condition monitoring; Copper; Dielectric materials; Electrical resistance measurement; Etching; Failure analysis; Kelvin; Leakage current; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the

Print_ISBN

0-7803-7722-2

Type

conf

DOI

10.1109/IPFA.2003.1222740

Filename

1222740