Title :
Demonstration of threshold voltage control techniques for vertical-type 4-terminal double-gate MOSFETs (4T-DGFET)
Author :
Masahara, Meishoku ; Liu, Yongxun ; Sekigawa, Toshihiro ; Hosokawa, Shinichi ; Ishii, Kenichi ; Matsukawa, Takashi ; Tanoue, Hisao ; Sakamoto, Kunihiro ; Yamauchi, Hiromi ; Kanemaru, Seigo ; Koike, Hanpei ; Suzuki, Eiichi
Author_Institution :
Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
Four-terminal double-gate MOSFETs (4T-DGFETs) and three-terminal (3T)-DGFETs have been fabricated on the same chip using vertical-type DGFET technology for the first time. Successful Vth control techniques are demonstrated with the fabricated vertical 4T-DGFETs. Flexible Vth controllability for each method is comprehensibly discussed. A new Vth-control scheme, by managing the input timing for two gates independently, is also proposed.
Keywords :
MOSFET; timing; 4T-DGFET; four-terminal double-gate MOSFET; gate input timing; gate offset bias; short channel effects; three-terminal DGFET; threshold voltage control techniques; vertical type MOSFET; Controllability; Fabrication; Flexible printed circuits; MOS devices; MOSFETs; Nanoelectronics; Temperature control; Threshold voltage; Timing; Voltage control;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356491
