A novel MEMS pressure sensor with MOSFET on chip

A novel MOSFET pressure sensor was proposed based on the MOSFET stress sensitive phenomenon, in which the source-drain current changes with the stress in channel region. Two MOSFETpsilas and two piezoresistors were employed to form a Wheatstone bridge served as sensitive unit in the novel sensor. Compared with the traditional piezoresistive pressure sensor, this MOSFET sensorpsilas sensitivity is improved significantly, meanwhile the power consumption can be decreased. The fabrication of the novel pressure sensor is low-cost and compatible with standard IC process. It shows the great promising application of MOSFET-bridge-circuit structure for the high performance pressure sensor. This kind of MEMS pressure sensor with signal process circuit on the same chip can be used in positive or negative tire pressure monitoring system (TPMS) which is very hot in automotive electron research field.