Experimental comparison between double gate, ground plane, and single gate SOI CMOSFETs

For the first time, we report an experimental comparison between planar double gate, single gate and ground plane CMOSFETs. Thanks to an original process, we managed to co-integrate, on the same wafer, these three devices with a TiN metal gate. Short channel effect control, static performance and mobility are quantified for each architecture. The advantages of double gate devices over ground plane and single gate transistors are experimentally highlighted. Ground plane MOSFETs require an optimized BOX in order to achieve a 30% in the saturation current.