Title :
Space-charge-limited current conductions in La2O3 thin films deposited by e-beam evaporation after low temperature dry-nitrogen annealing [gate oxide applications]
Author :
Kim, Yongshik ; Ohmi, Shun-ichiro ; Tsutsui, Kazuo ; Iwai, Hiroshi
Author_Institution :
Interdisciplinary Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
Abstract :
Lanthanum oxide (La2O3) was deposited by e-beam evaporation on n-Si(100), and annealed at 200°C in dry-nitrogen ex-situ for 5 min. From the applied voltage and temperature dependences of the current of the gate oxide, it has been shown that the main conduction mechanisms are SCLC (space-charge-limited current) and Schottky conductions at low and high applied voltages, respectively. Trap levels in the oxide band gap, composed of both exponential and localized distributions, were extracted by using the differential method. The dielectric constant obtained from Schottky conduction was 27 and was consistent with the C-V results.
Keywords :
Schottky effect; dielectric thin films; electron beam deposition; electron traps; energy gap; hole traps; lanthanum compounds; leakage currents; nitrogen; permittivity; rapid thermal annealing; space charge; vacuum deposition; 200 degC; 5 min; La2O3; N2; SCLC; Schottky conduction; charge traps; conduction mechanisms; dielectric constant; dielectric thin films; e-beam evaporation deposition; gate oxide current; gate oxide thickness; leakage conduction; leakage current; low temperature dry-nitrogen annealing; n-Si(100); oxide band gap trap levels; rapid thermal annealing; space-charge-limited current conduction; space-charge-limited current conductions; Capacitance-voltage characteristics; Electron traps; Leakage current; Photonic band gap; Rapid thermal annealing; Semiconductor films; Sputtering; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356493
