Hybrid Integrated Laser Driver Using Bipolar Transistors for Transmission Rates up to 1 Gbit/s

This paper describes the development of a laser driver using bipolar microwave transistors in which switching times under 200 ps have been achieved, corresponding to a return-to-zero bit rate in excess of 1 Gbit/s. Computer simulation was used to optimize the switching speed and stability of the circuit. The driver is matched to 50 ohm and accepts standard ECL level signals.