DocumentCode
1902000
Title
Study of oxide surface contamination using ToF-SIMS
Author
Lu, D.
Author_Institution
Inst. of Microelectron., Singapore, Singapore
fYear
2003
fDate
7-11 July 2003
Firstpage
92
Lastpage
95
Abstract
Amine-induced photoresist poisoning is well known. However, the mechanism for the formation of this amine contamination is still not well understood. In this study, it has been found that wet cleaning of the oxide surface a small amount of hydrocarbons, which are responsible for the gradual accumulation of amine species via airborne molecular contamination.
Keywords
photoresists; secondary ion mass spectra; surface cleaning; surface contamination; SIMS; airborne molecular contamination; amine-induced photoresist poisoning; hydrocarbons; oxide surface contamination; wet cleaning; Chemicals; Cleaning; Computational Intelligence Society; Hydrocarbons; Lead; Mass spectroscopy; Microelectronics; Resists; Surface contamination; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN
0-7803-7722-2
Type
conf
DOI
10.1109/IPFA.2003.1222745
Filename
1222745
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