DocumentCode :
1902000
Title :
Study of oxide surface contamination using ToF-SIMS
Author :
Lu, D.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
92
Lastpage :
95
Abstract :
Amine-induced photoresist poisoning is well known. However, the mechanism for the formation of this amine contamination is still not well understood. In this study, it has been found that wet cleaning of the oxide surface a small amount of hydrocarbons, which are responsible for the gradual accumulation of amine species via airborne molecular contamination.
Keywords :
photoresists; secondary ion mass spectra; surface cleaning; surface contamination; SIMS; airborne molecular contamination; amine-induced photoresist poisoning; hydrocarbons; oxide surface contamination; wet cleaning; Chemicals; Cleaning; Computational Intelligence Society; Hydrocarbons; Lead; Mass spectroscopy; Microelectronics; Resists; Surface contamination; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
Type :
conf
DOI :
10.1109/IPFA.2003.1222745
Filename :
1222745
Link To Document :
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