Title :
Metal oxide semiconductor UV sensor
Author :
Ho, W.S. ; Lin, C.-H. ; Kuo, P.-S. ; Hsu, W.W. ; Liu, C.W. ; Cheng, T.-H. ; Chen, Y.-Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved. The Ag photodetector exhibits maximum responsivity value of 5.59 mA/W at 319 nm. As compared to the p-i-n structure, the metal-oxide-semiconductor tunneling photodetector has a much simpler process and can integrate with integrated circuitry.
Keywords :
MIS devices; photodetectors; tunnelling; ultraviolet detectors; Ag; Si; gate electrode material; metal oxide semiconductor UV sensor; metal-oxide-semiconductor structure; metal-oxide-semiconductor tunneling photodetector; ultraviolet light detection; wavelength 319 nm; Circuits; Electrodes; Electromagnetic wave absorption; Narrowband; PIN photodiodes; Photoconductivity; Photodetectors; Semiconductor diodes; Tunneling; Wavelength measurement;
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2008.4716752
