Plasma charging damage immunities of rapid thermal nitrided oxide and decoupled plasma nitrided oxide

Author

Chong, Daniel ; Yoo, Won Jong ; Lek, Chun Meng

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

7-11 July 2003

Firstpage

141

Lastpage

145

Abstract

Plasma process induced damage on rapid thermal nitrided oxide (RTNO) and decoupled plasma nitrided oxide (DPNO) gate dielectrics are evaluated. It is found that the level of plasma induced damage on DPNO is comparable to that of RTNO. Hence, we can conclude that the decoupled plasma nitridation (DPN) process does not introduce significant damage to the silicon dioxide gate dielectric. We also discovered that RTNO fares better than DPNO in term of plasma charging damage immunity when both gate dielectrics are subjected to simulated plasma charging stresses.

Keywords

dielectric materials; nitridation; plasma materials processing; rapid thermal processing; silicon compounds; SiO₂; decoupled plasma nitrided oxide; gate dielectrics; plasma charging damage immunities; plasma induced damage; rapid thermal nitrided oxide; silicon dioxide gate dielectric; stresses; Dielectrics; Nitrogen; Plasma density; Plasma devices; Plasma materials processing; Plasma properties; Plasma simulation; Plasma temperature; Rapid thermal processing; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the

Print_ISBN

0-7803-7722-2

Type

conf

DOI

10.1109/IPFA.2003.1222754

Filename

1222754