Title :
Source-gated transistors for thin film electronics
Author :
Shannon, J.M. ; Balon, F.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Abstract :
A new form of thin film transistor, named the source-gated transistor (SGT), is described. The current is determined by a source barrier, located opposite a gate that controls the effective source barrier height. The SGT has several advantages compared with a standard FET. These include a much lower saturation voltage, higher output impedance, and in the case of amorphous silicon, a much better stability.
Keywords :
Schottky barriers; amorphous semiconductors; elemental semiconductors; hydrogen; silicon; thin film transistors; SGT stability; Si:H; gate-controlled source barrier height; hydrogenated amorphous silicon; metal-semiconductor Schottky barrier; output impedance; saturation voltage; source-gated transistors; thin film electronics; thin film technology; thin film transistor; Amorphous silicon; Circuits; FETs; Glass; Ion implantation; Optical arrays; Passivation; Schottky barriers; Thin film transistors; Voltage;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356504
