DocumentCode :
1902254
Title :
Neutron induced oxide degradation in MOSFET structures
Author :
Sharma, D.K. ; Chandorkar, A.N. ; Vaidya, S.J.
Author_Institution :
SGGS Coll. of Eng. & Technol., India
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
151
Lastpage :
155
Abstract :
In this paper, we have measured the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS samples were subjected to neutron radiation in a swimming pool type of reactor and other samples from the same batch were exposed to an equivalent dose of accompanying gamma radiation using Co60 gamma source. The difference in the damage caused by the neutrons. While executing this approach, major issues considered were, calibration of gamma radiation accompanying neutrons, consideration of energy spectrums of Co60 and accompanying gamma, measurement of thermal and fast neutron flux at the irradiation position of the reactor and measurement of flux at the different power levels.
Keywords :
MIS structures; MOSFET; gamma-ray effects; neutron flux; Co60 gamma source; MOSFET structures; energy spectrums; fast neutron flux; gamma radiation; neutron fluences; neutron induced oxide degradation; neutron radiation; neutrons damage; reactor irradiation; thermal neutron flux; Degradation; Energy measurement; Gamma rays; Inductors; Insulation; Ionization; Ionizing radiation; MOS devices; MOSFET circuits; Neutrons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
Type :
conf
DOI :
10.1109/IPFA.2003.1222756
Filename :
1222756
Link To Document :
بازگشت