Electrical analysis on the drain current of the ultra shallow junction by laser annealing

We applied non-melt laser anneal to the CMOS as an alternative method to activate the source/drain junction dopant. By simple changing of the spike anneal to the laser anneal, it was found that the short channel effect (SCE) is suppressed remarkably. The drive current of the device with the laser anneal is improved for the long channel transistor but degraded for the short channel transistor, compared to the spike anneal. We showed that the drive current is directly related to the overlap capacitance at short channel. And using a forward bias method, we found out that the current degradation is caused by the contact resistance.