Magnetoresistance mobility measurements in sub 0.1 μm Si MOSFETs

Author

Meziani, Y.M. ; Lusakowski, J. ; Teppe, F. ; Dyakonova, N. ; Knap, W. ; Romanjek, K. ; Ferrier, M. ; Clerc, R. ; Udo, Ghiba ; Boeuf, F. ; Skotnicki, T.

Author_Institution

GES, Univ. de Montpellier II, France

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

157

Lastpage

160

Abstract

In this work, for the first time, are reported magnetoresistance (MR) mobility measurements performed on sub 0.1 μm Si MOSFETs. This method enables the carrier mobility to be measured from weak to strong inversion without knowing the device channel length. The MR mobility results are compared to effective mobility data obtained by standard parameter extraction and split C-V techniques. The MR data clearly indicates a significant decrease of the mobility with the gate length reduction. This behavior and the difference between MR and effective mobility values are discussed and interpreted by 2D transport analysis.

Keywords

MOSFET; carrier mobility; elemental semiconductors; inversion layers; magnetoresistance; semiconductor device measurement; semiconductor device models; silicon; 0.1 micron; 2D transport analysis; MOSFET; Si; device channel length; effective mobility; gate length dependent carrier mobility; magnetoresistance mobility measurement; strong inversion; weak inversion; Capacitance-voltage characteristics; Conductivity; Geometry; MOSFETs; Magnetic field measurement; Magnetoresistance; Parameter extraction; Performance evaluation; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356513

Filename

1356513